Tiejun Gao Australian National University Tolerating holes in wearable memories Wearable memory has been proposed to replace DRAM as the technology of choice for main memory. Phase Change Memory (PCM), one of these technologies, has received most research attention recent years. But PCM wears out more quickly than DRAM and PCM cells can permanently fail, therefore using the current DRAM approach to handle failures in wearable memories is not feasible any more. Our work is to explore the possibilities of modifying managed runtime to achieve failure toleration and graceful performance degradation.